home

SEMICONDUCTOR
EQUIPMENT MANUFACTURING

Solutions

Power Device

随着对环保领域的高度关注,电动汽车的开发和商业化成为了韩国相关行业的核心话题。此外,对高功率半导体元件的需求变得越来越重要。国防战略物资的核心GaN元件也是重要的Power device。

Gigalane多年来一直为行业提供用于Power device生产的ICP etcher。不仅生产Si基板的Power device,而且具备使用SiC基板的Trench工艺和 Back VIA等卓越工艺。

Related Products

ICP Etcher
  • - 2inch-8inch Shpphire, Si, SiC, GaAs, LN/LT Substrate
  • - PSS, GaN, 5iC, GaAs, Polymide, Metal, Dielectric films, Etc.
  • - Tray Type(Conventional/Face Down)
  • - Standalone (ESC, In-line Asher Optical)
Performance
  • - PSS Lens : Symmetric Pyramidal Shape, (Height,Width) ±0.05㎛
  • - Face-down Chamber (MAXIS800L) : Particle free, High throughput
  • - Throughput (MAXIS300L/MAXIS800L) : Tray Type (2,4,6,8inch)
  • - Dual Chiller and Dual Gas Flow (MAXIS800L)
  • - Standalone_4,6,8inch,ESC/Mechanical Clamp available (MAXIS200L)
  • - In-line VDS Asher for Metal Etcher (NeoGEN MAXIS200L_RADIION200)
  • - ESC for Piezoelectric Substrate of SAW filter
  • - SIC Trench or TSV etching
Applied Device and Process Capability
  • 图片出处: New Electronics GaN Power Device 国防用核心Power device,可进行高功率处理。

  • 图片出处: New Electronics SiC Power Device 可承受1000V或更高电压的SiC材料可通过Back VIA,Trench等自由加工

Catalog PDFProducts GO

Core Solutions

向您介绍SEM Business的核心解决方案